Important Results

“Hole Redistribution” Model – AlGaN/GaN Power HEMTs

Carbon doping in AlGaN/GaN power HEMTs is conventionally adopted to reduce buffer leakage and increase breakdown voltage. Unfortunately, C doping introduces acceptor-like traps in the buffer that cause on-resistance (RON) dispersion…

Papers Published in High IF Journals

  1. N. Zagni, F. M. Puglisi, P. Pavan, and M. A. Alam, “Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges,” Proc. IEEE, vol. 111, no. 2, pp. 158–184, (2023). DOI: 10.1109/JPROC.2023.3234607.
  2. Mario Lanza, Abu Sebastian, Wei D. Lu, Manuel Le Gallo, Meng-Fan Chang, Deji Akinwande, Francesco M. Puglisi, Husam N. Alshareef, Ming Liu, Juan B. Roldan, “Memristive technologies for data storage, computation, encryption, and radio-frequency communication,” Science, Volume 376, Issue 6597, pp. 1-13, (2022). DOI: 10.1126/science.abj9979
  3. S. Hong, N. Zagni, S. Choo, S. Baek, A. Bala, H. Yoo, B. H. Kang, H. J. Kim, H. J. Yun, M. A. Alam and S. Kim, “Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry. Nat Commun 12, 3559, (2021). DOI: 10.1038/s41467-021-23711-x (OPEN ACCESS)
  4. N. D. Canicoba, N. Zagni, F. Liu, G. McCuistian, K. Fernando, H. Bellezza, B. Traore, R. Rogel, H. Tsai, L. Le Brizoual, W. Nie, J. J. Crochet, S. Tretiak, C. Katan, J. Even, M. G. Kanatzidis, B. W. Alphenaar, J.-C. Blancon, M. A. Alam, A. D. Mohite, “Halide perovskite high-k field-effect transistors with dynamically reconfigurable ambipolarity,” ACS Materials Lett., vol. 1, pp. 633-640, (2019). DOI: 10.1021/acsmaterialslett.9b00357 (OPEN ACCESS)
  5. Lanza, M., Wong, H.-S. P., Pop, E., Ielmini, D., Strukov, D., Regan, B. C., Larcher, L., Villena, M. A., Yang, J. J., Goux, L., Belmonte, A., Yang, Y., Puglisi, F. M., Kang, J., Magyari-Köpe, B., Yalon, E., Kenyon, A., Buckwell, M., Mehonic, A., Shluger, A., Li, H., Hou, T.-H., Hudec, B., Akinwande, D., Ge, R., Ambrogio, S., Roldan, J. B., Miranda, E., Suñe, J., Pey, K. L., Wu, X., Raghavan, N., Wu, E., Lu, W. D., Navarro, G., Zhang, W., Wu, H., Li, R., Holleitner, A., Wurstbauer, U., Lemme, M. C., Liu, M., Long, S., Liu, Q., Lv, H., Padovani, A., Pavan, P., Valov, I., Jing, X., Han, T., Zhu, K., Chen, S., Hui, F., Shi, Y., Adv. Electron. Mater. 2019, 5, 1800143. DOI: 10.1002/aelm.201800143
  6. Pan, C. B., Ji, Y. F., Xiao, N., Hui, F., Tang, K., Guo, Y., Xie, X., Puglisi, F. M., Larcher, L., Miranda, E., Jiang, L. L., Shi, Y. Y., Valov, I., McIntyre, P. C., Waser, R., Lanza, M., Adv. Funct. Mater. 2017, 27, 1604811. DOI: 10.1002/adfm.201604811