Professor Puglisi is one of the co-authors of the article entitled “Memristive technologies for data storage, computation, encryption, and radio-frequency communication” published on the prestigious journal Science on June 3rd, 2022. The article features a new roadmap on memristive technologies,
New Transistors Paper Published
Our paper entitled: “The Role of Carbon Doping on Breakdown, Current Collapse, and Dynamic On‐Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates” was published on Physica Status Solidi (A). DOI: 10.1002/pssa.201900762